Organic–Inorganic Nanocomposite Film for High‐Performance Stretchable Resistive Memory Device.

A compatible organic/inorganic nanocomposite film for a stretchable resistive memory device with high performance is demonstrated using poly(4‐vinylpyridine)‐block‐poly(propyl methacrylate) (P4VP‐b‐PPMA) with zinc oxide (ZnO) nanoparticle. The PPMA soft segment is designed for reducing the rigidity of the active layer, while the P4VP block serves as a charge‐trapping component to induce conductive filament and also a compatible moiety for inorganic nanoparticles through hydrogen bonding. The experimental results show that the P4VP‐b‐PPMA‐based electrical memory device exhibits write‐once‐read‐many‐times memory behavior and an excellent ON/OFF current ratio of over 105 with a stable turn‐on voltage (Vset) around −2.0 V and stable memory behavior upon stretching up to 60% strain. On the other hand, P4VP‐b‐PPMA/ZnO nanocomposite film switches the memory characteristic to the dynamic random access memory behavior. The stretchable memory device prepared from the nanocomposite film can have a stretching durability over 40% strain and up to 1000 times cycling stretch–relaxation test. This work demonstrates a new strategy using nanocomposite films with tunable electrical characteristics and enhanced mechanical properties for stretchable electrical devices. [ABSTRACT FROM AUTHOR]