Back to Search
Start Over
Engineering the band structures of few-layer black phosphorus by adsorbed metal atoms.
- Source :
-
Chemical Physics Letters . Feb2020, Vol. 740, pN.PAG-N.PAG. 1p. - Publication Year :
- 2020
-
Abstract
- • Charge transfer between adsorbed metals and BP builds an internal electric field. • Electronic structures of few-layer BP can be modulated by the Stark effect. • Phase transition of semiconductor-Dirac metal was found in few-layer BP. Few-layer black phosphorus (BP) is an important member in a family of two-dimensional materials because of its unique physical properties. But, for future applications, further tuning its electronic structure is necessary. Here we investigate, using ab initio density-function theory, the band structures of few-layer BP after the adsorption of the alkali metal atoms. It is shown that such adsorption can modify the band structures of few-layer BP in terms of the Stark effect. The charge transfer between the adsorbed atoms and few-layer BP is responsible for the internal electric field. Both the effects of the layer thickness and the concentration of adsorbed atoms on the band structures of few-layer BP are also quantitatively studied. The calculated results show that the band gap decreases with increasing the concentration of the adsorbed atoms. Further increasing the thickness of few-layer BP will close its band gap and induce the phase transition of semiconductor - Dirac metal. These findings imply that the electronic properties of few-layer BP can be modulated by adsorbing the alkali metal atoms. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00092614
- Volume :
- 740
- Database :
- Academic Search Index
- Journal :
- Chemical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 141630731
- Full Text :
- https://doi.org/10.1016/j.cplett.2019.137075