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Extraordinary magnetoresistance in encapsulated monolayer graphene devices.

Authors :
Zhou, Bowen
Watanabe, K.
Taniguchi, T.
Henriksen, E. A.
Source :
Applied Physics Letters. 2/3/2020, Vol. 116 Issue 5, p1-4. 4p. 3 Graphs.
Publication Year :
2020

Abstract

We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride having metallic edge contacts and a central metal shunt. Extremely large EMR values, M R = (R (B) − R 0) / R 0 ∼ 10 5 , are achieved in part because R0 approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, dR/dB, which in two-terminal measurements is the highest yet reported for EMR devices and in particular exceeds previous results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of pn-junctions at the graphene-metal shunt interface. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
116
Issue :
5
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
141625725
Full Text :
https://doi.org/10.1063/1.5142021