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Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs.
- Source :
-
IEEE Transactions on Nuclear Science . Feb2020, Vol. 67 Issue 2, p38-43. 6p. - Publication Year :
- 2020
-
Abstract
- Pulsed, laser-induced, single-event current measurements on silicon-on-insulator (SOI) FinFETs at subbandgap wavelength (1260 nm) are affected by the polarization of the laser light used in the experimental testing setup. Such polarization dependence is not observed during pulsed laser, single-event effects testing on large-area silicon diodes, suggesting that polarization dependence arises due to the presence of the nanoscale fin. Plasmonic enhancement is proposed as a likely mechanism for the polarization effects due to the metal/dielectric interfaces in the fin region. The observed polarization dependence has ramifications for collection and interpretation of data acquired by pulsed laser testing. Device orientation of FinFETs and other nanoscale devices during pulsed laser testing should be considered in order to ensure consistent testing conditions and reproducible measurement results across multiple measurement campaigns. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 67
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 141516486
- Full Text :
- https://doi.org/10.1109/TNS.2019.2956911