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Study of hydrogen effects on microstructural development of SiC base materials under simultaneous irradiation with He- and Si-ion irradiation conditions

Authors :
Hasegawa, A.
Miwa, S.
Nogami, S.
Taniguchi, A.
Taguchi, T.
Abe, K.
Source :
Journal of Nuclear Materials. Aug2004, Vol. 329-333, p582-586. 5p.
Publication Year :
2004

Abstract

The microstructural development of SiC/SiC composite under the multi-ion beam irradiation up to 10 dpa at 800 and 1000 °C was investigated by transmission electron microscopy. Microstructural evolution in each composites component was dependent on the component grain structures, the helium or hydrogen implanting mode and the irradiation temperature. In this study, the synergistic effects of H and He gas elements on cavity formation in the composite component are discussed. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00223115
Volume :
329-333
Database :
Academic Search Index
Journal :
Journal of Nuclear Materials
Publication Type :
Academic Journal
Accession number :
14110006
Full Text :
https://doi.org/10.1016/j.jnucmat.2004.04.122