Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers.

The recombination rates in InGaN/AlGaN/GaN multiple quantum wells (MQWs) emitting in the green-yellow and grown with different Al compositions in the AlGaN interlayer (IL) are shown. By transforming measurements on radiative efficiency, absorption, and differential carrier lifetime, the radiative and nonradiative rates are determined. The IL Al composition controls lattice relaxation of the MQWs, as determined by X-ray reciprocal space mapping, and, therefore, defect formation. For the most pseudomorphic MQWs, the Shockley-Read-Hall (SRH) A coefficient is minimized and is similar to reports at shorter (blue and green) wavelengths. It is an order of magnitude smaller than a conventional InGaN/GaN MQW and is the most significant factor behind the improvement in radiative efficiency using the IL. The radiative B coefficient is also reduced and a minimum for the most pseudomorphic MQWs due to a reduction in the electron-hole wavefunction overlap. However, the decrease in A is more significant and leads to an overall improvement in the radiative efficiency. These recombination rate measurements confirm that if the SRH recombination is controlled, then the severe reduction of radiative recombination with an increased emitting wavelength is one of the main challenges in realizing high efficiency, long-wavelength InGaN-based MQW emitters operating at low to moderate current densities. [ABSTRACT FROM AUTHOR]