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Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits.

Authors :
Amat, E.
Klupfel, F.
Bausells, J.
Perez-Murano, F.
Source :
IEEE Transactions on Electron Devices. Oct2019, Vol. 66 Issue 10, p4461-4467. 7p.
Publication Year :
2019

Abstract

Quantum dots (QDs) can be used as conductive islands to build-up single-electron transistors (SETs). The characteristics of the QDs define the functional performance of the SETs. In consequence, analyzing the influence of the variations of QD dimensions on the performance of hybrid SET-FET circuits is of high relevance. We employ a self-developed SET compact model which is calibrated to 3-D quantum-mechanics-based simulations in order to obtain realistic model parameters. A method to improve the circuit behavior, i.e., to increase the output current, is proposed. It is concluded that the variation of the QD size presents the largest influence on the overall circuit behavior. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
66
Issue :
10
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
139437515
Full Text :
https://doi.org/10.1109/TED.2019.2937141