Evaluation of Ion-Implanted Silicon Substrate by Photothermal Deflection Spectroscopy.

It is important to evaluate the crystalline quality of an ion-implanted layer after annealing. The evaluation method must be simple and nondestructive. In this study, a silicon substrate was implanted with various doses of P+ of Si+ at various acceleration energies and the crystalline quality of the implanted layer after annealing was evaluated by photothermal deflection spectroscopy (PDS). The results were compared with those obtained by cross-sectional TEM observation, RBS, resistivity and EST measurements. Hence it was found that the PDS method can evaluate the amorphous layer thickness formed by ion implantation and the quality of crystalline defects as a change of additional absorption. The PDS method can detect micro-crystalline defects and changes in crystalline structure due to annealing which are not observed by the RBS and resistivity measurements. Because the PDS method is relatively simple and nondestructive, it is effective in evaluating the crystalline quality of an implanted layer. [ABSTRACT FROM AUTHOR]