The Effect of Hydrogen on the Device Stability of Amorphous InGaZnO Thin‐Film Transistors under Positive Bias with Various Temperature Stresses.

MLA

Kim, Myeong-Ho, et al. “The Effect of Hydrogen on the Device Stability of Amorphous InGaZnO Thin‐Film Transistors under Positive Bias with Various Temperature Stresses.” Physica Status Solidi. A: Applications & Materials Science, vol. 216, no. 20, Oct. 2019, p. N.PAG. EBSCOhost, https://doi.org/10.1002/pssa.201900297.

APA

Kim, M.-H., Park, J., Lim, J.-H., & Choi, D.-K. (2019). The Effect of Hydrogen on the Device Stability of Amorphous InGaZnO Thin‐Film Transistors under Positive Bias with Various Temperature Stresses. Physica Status Solidi. A: Applications & Materials Science, 216(20), N.PAG. https://doi.org/10.1002/pssa.201900297

Chicago

Kim, Myeong-Ho, Jun-won Park, Jun-Hyung Lim, and Duck-Kyun Choi. 2019. “The Effect of Hydrogen on the Device Stability of Amorphous InGaZnO Thin‐Film Transistors under Positive Bias with Various Temperature Stresses.” Physica Status Solidi. A: Applications & Materials Science 216 (20): N.PAG. doi:10.1002/pssa.201900297.