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Kink as a new degree of freedom to tune the thermal conductivity of Si nanoribbons.
- Source :
-
Journal of Applied Physics . 10/21/2019, Vol. 126 Issue 15, pN.PAG-N.PAG. 9p. 1 Diagram, 3 Graphs. - Publication Year :
- 2019
-
Abstract
- An attractive feature of nanomaterials is the possibility of tuning their properties through controlling their size and surface morphology, and understanding the effects of various parameters on thermal transport properties of nanostructures has been an active research topic in the past two decades. Through systematic studies of kinked silicon nanoribbons, we show how the kink morphology, a newly recognized degree of freedom for tuning thermal transport in nanostructures, modulates the thermal conductivity of these nanoribbons. For kinked Si nanoribbons that are 34 nm thick and 141 nm wide, the measured thermal conductivity first decreases as the period length reduces from 2 μm to 0.5 μm, reaching a 21% thermal conductivity reduction as compared to that of a straight counterpart at 300 K. However, as the period length drops to a level at which a straight heat transfer channel opens between the heat source and the sink, the thermal conductivity exhibits a steep increasing trend. Moreover, the comparison of thermal conductivity reduction for kinked ribbons along different crystalline directions indicates that phonon focusing could be exploited to further suppress thermal transport in kinked silicon nanoribbons. These results provide important guidelines on modulating heat transfer in nanostructures using kinks, which could be adopted to tune the thermal properties of nanostructures for different applications, such as thermoelectrics, microelectronic device thermal management, and functional thermal regulators. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 126
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 139229875
- Full Text :
- https://doi.org/10.1063/1.5119727