The effect of a random transverse field on the critical and compensation behaviors of a nanowire.

In this work, the Effective Field Theory (EFT) based on the probability distribution method is used to study the phase diagrams of an antiferroelectric nanowire with core/shell morphology, in the presence of a random transverse field. We have investigated the effects of the temperature, the concentration c , the surface and the interfacial couplings on the critical and the compensation behaviors (T c and T comp) of the system. The polarization, the susceptibility and the pyroelectric coefficient as a function of the temperature are examined. In addition, the phase diagrams of the nanowire are investigated in detail by modifying the system parameters. It is found that the interfacial coupling | J int / J c | shifts the random transverse field to higher values, therefore the area of the ordered phase is enlarged, which could affects the critical and the compensation temperatures. • The phase diagrams of a nanowire with antiferroelectric interfacial coupling are examined by the effective field theory. • The effect of the antiferromagnetic interfacial coupling on the critical and the compensation behaviors is studied. • The influence of the random transverse field on electric properties. • The dependence of the polarization, pyroelectric coefficient and susceptibility on the temperature are investigated. [ABSTRACT FROM AUTHOR]