Weak localization and electron–electron interaction in disordered V80Al<f>20-x</f>Fe<f>x</f> alloys at low temperature

In this Letter we report on the electrical resistivity and magneto-resistivity of disordered V80Al<f>20-x</f>Fe<f>x</f> alloys in the temperature range <f>1.5⩽T⩽300</f> K and analyze them in the light of weak localization and electron–electron interaction. The low temperature zero field resistivity obeys a <f>T1/2</f> law, which is explained by electron–electron interaction. The low field magneto-resistivity is described by weak localization theory under strong spin–orbit interaction. The electron–phonon scattering rate obeys a quadratic temperature dependence. This observation is interpreted by the existing theories of electron–phonon interaction. [Copyright &y& Elsevier]