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Creep of single crystalline and polycrystalline T2 phase in the Mo–Si–B system
- Source :
-
Intermetallics . Jul2004, Vol. 12 Issue 7-9, p699-704. 6p. - Publication Year :
- 2004
-
Abstract
- The T2 phase in the Mo–Si–B system has great potential for ultra-high temperature structural applications. We examined creep of the single crystalline and polycrystalline T2 phase. The steady-state creep rate of the [021] oriented specimens is as low as 3.1×10-8 s-1 at 1500 °C and 432 MPa. The minimum creep rates at 1500 °C of the [001] oriented and polycrystalline specimens are 6.9×10-8 s-1 at 600 MPa and 3.0×10-8 s-1 at 300 MPa, respectively. The activation energy for creep was found to be ∼740 and ∼400 kJ mol-1 for [021] and [001] oriented specimens, respectively. Stress exponent for creep was found to be 6.8, 4.3 and 4.6 for [021] and [001] oriented and polycrystalline specimens, respectively. Creep resistance of the single crystalline and polycrystalline T2 specimens is much better than that of MoSi2 and Si3N4 base structural ceramics. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 09669795
- Volume :
- 12
- Issue :
- 7-9
- Database :
- Academic Search Index
- Journal :
- Intermetallics
- Publication Type :
- Academic Journal
- Accession number :
- 13805212
- Full Text :
- https://doi.org/10.1016/j.intermet.2004.02.009