Optical and Electrical Properties of Pristine and Al Doped ZnO Thin Films.

The optical and electrical properties of pristine and Al doped ZnO thin films on quartz substrate deposited using pulsed laser deposition (PLD) technique were studied. Photoluminescence (PL) study shows that emission peak shifts towards lower wavelength, which confirms that band gap increases using Al doping. 3% and 6% Al doped ZnO films shows n-type behavior with 19.2 cm²/Vs and 9.59 cm²/Vs hall mobility. Carrier concentration and electrical resistivity of 3% and 6% Al doped films were -7.588 x 10+20 cm−3, 0.0004274 Ohm-cm and 28.75 cm−3,0.0005749 Ohmcm respectively. [ABSTRACT FROM AUTHOR]