Al concentration dependence of crystal structure for Ca3Ta(Ga,Al)3Si2O14 piezoelectric single crystals.

Al concentration dependence of the crystal structure on Ca 3 Ta(Ga 1- x Al x)Si 2 O 14 (CTGAS) piezoelectric single crystals were investigated by X-ray crystal structure analysis. O(2)-Si-O(2) and Si-O(2)-(Ga,Al) bond angles systematically increased with increasing Al concentration, and the result suggests that the increase of structural anisotropy by the Al substitution is attributable to the planarization of the O(2)-Si-O(2)-(Ga,Al). In addition, (Ga,Al)-O(2), (Ga,Al)-O(3) and Ca-O(1) bond lengths systematically decreased with increasing the Al substitution. The cation shift of the Si and (Ga,Al) ions out of center from the barycenter of the oxygen coordination environment decreased with increasing Al concentration. Image 1 [ABSTRACT FROM AUTHOR]