Back to Search
Start Over
Steering charge transfer for boosting photocatalytic H2 evolution: Integration of two-dimensional semiconductor superiorities and noble-metal-free Schottky junction effect.
- Source :
-
Applied Catalysis B: Environmental . May2019, Vol. 245, p477-485. 9p. - Publication Year :
- 2019
-
Abstract
- Utilize the two-dimensional semiconductor superiorities and noble-metal-free Schottky junction effect to boost the photocatalytic performance. • Synergistically utilize 2D semiconductor superiorities and noble-metal-free Schottky junction to boost the photocatalytic performance. • The stronger redox capability and the fast charge kinetics synergistically boosted the photocatalytic performance. • By ESR analysis and theoretical calculation, the photocatalytic mechanism was researched in detail. Sunlight-driven photocatalysis holds great promise for alleviating the energy and environmental crises. For the visible-light-driven bare semiconductor, there is an irreconcilable contradiction between the light absorption and strong redox capabilities. Here, we reported a predictable design for improving the photocatalytic performance via regulating the bandgap and accelerating the charge kinetics of the semiconductor. Taken together, utilize two-dimensional (2D) structure to essentially increase the bandgap of the semiconductor for gaining the higher transfer and separation of the photogenerated electron-hole pairs and the stronger redox capabilities; and accelerate charge kinetics via the driving force from the Schottky junction. Meanwhile, the Schottky barrier prevents the photogenerated electrons trapped by a noble-metal-free electron acceptor from dually recombining. Additionally, the energy transfer process of the photocatalytic reaction was also researched in detail, aligning well with the photocatalytic mechanism. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09263373
- Volume :
- 245
- Database :
- Academic Search Index
- Journal :
- Applied Catalysis B: Environmental
- Publication Type :
- Academic Journal
- Accession number :
- 137928541
- Full Text :
- https://doi.org/10.1016/j.apcatb.2018.12.011