Monte Carlo Simulation of Displacement Damage in Graphene.

This paper introduces a Monte Carlo (MC) approach based on the binary collision approximation to estimate defect types and densities in proton- and heavy-ion-irradiated graphene layers. The types and concentrations of defects that appear in graphene due to irradiation with various ions with energies ranging from ~100 keV to ~100 MeV are identified. This simple method enables defect introduction rates in graphene to be predicted to within better than a factor of two accuracy, relative to experimental measurements in a beam environment. The results demonstrate that all defects generated by ions with high incident energy are formed via head-on collisions and in-plane recoils, which is unique for 2-D materials. [ABSTRACT FROM AUTHOR]