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Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si.
- Source :
-
IEEE Transactions on Nuclear Science . Jul2019, Vol. 66 Issue 7, p1599-1605. 7p. - Publication Year :
- 2019
-
Abstract
- We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated with 10-keV X-rays under different gate biases. The largest degradation after irradiation occurs at $V_{\mathrm {G}} = -1$ V. Radiation-induced trapped positive charge dominates the TID response of InGaAs FinFET transistors, consistent with previous results for InGaAs multifin capacitors. Shorter gate-length devices show larger radiation-induced charge trapping than longer gate-length devices, most likely due to the electrostatic effects of trapped charge in the surrounding SiO2 isolation and SiO2/Si3N4 spacer oxides. The 1/ $f$ noise measurements indicate a high trap density and a nonuniform defect-energy distribution, consistent with a strong variation of effective border-trap density with surface potential. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 66
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 137646634
- Full Text :
- https://doi.org/10.1109/TNS.2019.2890827