Effect of In on the Properties of AlSb Thin Film Solar Cell.

AlSb thin-film solar cell consisting of p-type AlSb was prepared on n-type Si substrate by using thermal evaporation. The effect of the preparation and partial replacement of Aluminum with Indium of the Al1-xInxSb were studied to obtain the best properties. Thin films have been deposited on glass substrate at R.T with ratios (X=0.0, 0.1 and 0.3) under the vacuum of 10-6 Torr with (150) nm thickness. Structural, optical and electrical properties of the films were investigated, I-V characteristics studies as ratios of Indium increased, measurements indicate formation of good quality thin films of AlSb having band gap within the range reported in the literature. [ABSTRACT FROM AUTHOR]