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An Accurate Characterization of Capture Time Constants in GaN HEMTs.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Jul2019, Vol. 67 Issue 7, p2465-2474. 10p. - Publication Year :
- 2019
-
Abstract
- This paper provides theoretical and experimental evidence that, contrary to what is a widely reported belief, the capture time constant of GaN high-electron-mobility transistor (HEMTs) deep-level traps is not infinitesimally shorter than the modulation envelope time features of usual excitation signals. Instead, it can have a nonnegligible impact on their power amplification. A specifically conceived test bench, capable of measuring capture time constants at guaranteed invariant thermal dissipation conditions, revealed that the capture process can range from less than a microsecond up to a few tens of milliseconds. Furthermore, a theoretical justification based on the Shockley–Read–Hall statistics is provided to explain this widespread time constants’ behavior of deep-level traps. As a practical application example of these findings, the detailed characterization of the capture time constants performed in this paper proved to constitute a valuable tool in understanding the behavior of GaN power amplifiers (PAs) designed for pulsed radar signals. [ABSTRACT FROM AUTHOR]
- Subjects :
- *MODULATION-doped field-effect transistors
*POWER amplifiers
*RADAR
Subjects
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 67
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 137295196
- Full Text :
- https://doi.org/10.1109/TMTT.2019.2921338