Nanoscale thermal cloaking by in-situ annealing silicon membrane.

With the advent of thermal metamaterials, many new thermal functionalities have been proposed, like thermal cloaking, concentrating, etc. However, these thermal functionalities are based on the transformation thermotics or scattering cancellation technique, which, derived from Fourier's law, cannot apply to the micro-/nanoscale counterparts. In this paper, we design a nanoscale thermal cloak based on a crystalline silicon (Si) membrane and investigate the in-plane phonon transport via non-equilibrium molecular dynamics (NEMD) simulation by in-situ tuning the thermal conductivity of the thermal cloak from crystalline Si to amorphous Si. The two-dimensional temperature profile is obtained, and the thermal cloaking effect is evaluated by the ratio of heat flux. By analyzing the phonon density of state (PDOS) and the mode participation ratio (MPR), the mechanism can be attributed to the phonon localization in the annealed cloaking region. The proposed nanoscale thermal cloak by in-situ tuned thermal conductivity, may trigger the development of nanoscale thermal functionalities and open avenues for and thermal management for nano-photonics and nano-electronics. • We design a nanoscale thermal cloak with in-site tuned thermal conductivity. • Thermal cloaking effect is positively proportional to the width of the cloak ring. • Phonon localization and non-propagating diffusive mode are attributed. [ABSTRACT FROM AUTHOR]