AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact.

MLA

Zhang, Lian, et al. “AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact.” IEEE Transactions on Electron Devices, vol. 66, no. 3, Mar. 2019, pp. 1197–201. EBSCOhost, https://doi.org/10.1109/TED.2018.2890207.

APA

Zhang, L., Cheng, Z., Zeng, J., Lu, H., Jia, L., Ai, Y., & Zhang, Y. (2019). AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact. IEEE Transactions on Electron Devices, 66(3), 1197–1201. https://doi.org/10.1109/TED.2018.2890207

Chicago

Zhang, Lian, Zhe Cheng, Jianping Zeng, Hongxi Lu, Lifang Jia, Yujie Ai, and Yun Zhang. 2019. “AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact.” IEEE Transactions on Electron Devices 66 (3): 1197–1201. doi:10.1109/TED.2018.2890207.