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Thermal conductivity of single-layer MoS2(1−x)Se2x alloys from molecular dynamics simulations with a machine-learning-based interatomic potential.

Authors :
Gu, Xiaokun
Zhao, C.Y.
Source :
Computational Materials Science. Jul2019, Vol. 165, p74-81. 8p.
Publication Year :
2019

Abstract

Single-layer transition metal dichalcogenides (TMDs) and their alloys have attracted intensive attention due to their potential in optoelectronics and energy conversion. Understanding the thermal transport in these two-dimensional materials is crucial for designing reliable devices where these materials are integrated. Molecular dynamics simulation is a commonly employed approach to investigate phonon transport and thermal conductivity in solids, but interatomic potentials that could satisfactorily characterize the phonon properties of multiple TMDs simultaneously are not available at present. In this paper, a machine-learning-driven interatomic potential for MoS 2 -MoSe 2 system based on the spectral neighbor analysis approach is parameterized by learning from a large amount of data generated from first-principles. The phonon dispersion and mode-specific Gruneisen parameters of MoS 2 and MoSe 2 , as well as the phonon dispersion of the MoS 2 -MoSe 2 superlattice, obtained from first-principles are well reproduced by the potential parameterized. By performing equilibrium molecular dynamics simulations, the lattice thermal conductivity of MoS 2(1−x) Se 2x alloys are calculated and a ten-fold reduction compared with MoS 2 is found when x = 50%. Moreover, the roles of mass disorder and force-field disorder on the low thermal conductivity is identified. The parameterized interatomic potential could be utilized to study phonon transport in other MoS 2 -MoSe 2 nanostructures. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09270256
Volume :
165
Database :
Academic Search Index
Journal :
Computational Materials Science
Publication Type :
Academic Journal
Accession number :
136462585
Full Text :
https://doi.org/10.1016/j.commatsci.2019.04.025