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Progress to electrical properties of diamond-SiC composites under high pressure and high temperature.
- Source :
-
Diamond & Related Materials . Apr2019, Vol. 94, p203-208. 6p. - Publication Year :
- 2019
-
Abstract
- Polycrystalline diamond in the presence of silicon with different sintering times was investigated under high pressure and high temperature of 5.0 GPa and 1400 °C, respectively, using a multi-anvil apparatus. In this research, phase analysis demonstrated that the content of SiC increased and the amount of Si decreased clearly with the sintering time extending by X-ray diffraction (XRD). The characterization of the sintered body demonstrated that the electrical resistance decreased as the reaction time rose. Specimens with good conductivity of 17 Ω·cm−1 sintered for 20 min at 1400 °C under 5.0 GPa were successfully obtained. The measured Vickers hardness and thermal stability of the synthesized diamond-SiC composites in the present study were >40 GPa and 1450 K, respectively. • Diamond–SiC composites were investigated by sintering different times in the range of 1–20 min at 5.0 GPa and 1400 °C. • SiC was densely packed between the diamond's grain boundaries, preventing the contact between the oxygen and diamond. • Extending the sintering time, and the graphitization of diamond occurred in low pressure zone are gradually in process. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09259635
- Volume :
- 94
- Database :
- Academic Search Index
- Journal :
- Diamond & Related Materials
- Publication Type :
- Academic Journal
- Accession number :
- 136343919
- Full Text :
- https://doi.org/10.1016/j.diamond.2019.03.012