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Spin reorientation functionality in antiferromagnetic TmFe1-xInxO3 polycrystalline samples.
- Source :
-
Journal of Alloys & Compounds . Jun2019, Vol. 789, p80-89. 10p. - Publication Year :
- 2019
-
Abstract
- We report doping at B-Site in TmFeO 3 with In3+ ion of varying concentration (x = 0.02, 0.05, 0.07, 0.1) to explore the effect of In3+ ion substitution on structural, magnetic and vibrational properties. XRD study revealed that all the synthesized samples exhibit distorted perovskite orthorhombic (Pbnm) crystal symmetry. The immediate observable effect was an increase in lattice parameters with increasing doping up from x = 0.0 to 0.1 as evidenced by diffraction peaks shifted towards lower angle. Spin reorientation transition (Γ 4 →Γ 2) in all prepared samples occurs at temperature (∼85–92 K) to be a process involving the continuous rotation of Fe3+ spins. M-H curves display the coexistence of weak ferromagnetism and antiferromagnetic ordering at all the measured temperatures with reduction in coercive field and remanence values. Varied magnetic behaviors were observed in this series of compounds, which are believed to be associated with the different interactions of Fe and rare earth ions. The occurrence of two-magnon and two-phonon modes in Raman spectra at temperature around 100 K attributed to spin-reorientation transition exhibited by TmFe 1-x In x O 3. This might be unambiguous evidence for spin-phonon coupling in the prepared compounds. The coupling and possible presence of two phonon and magnon pair scattering and other energy carriers have been used to explain several recently discovered thermally driven spin transport phenomena. • XRD data reveals that samples TmFe 1-x In x O 3 possess the orthorhombic structure (Pbnm). • Spin reorientation transition (Γ 4 → Γ 2) arises at temperature between 85 and 92 K. • M-H curves display the coexistence of weak ferromagnetism and antiferromagnetic ordering • Evidences for spin-phonon coupling are also comes from Raman spectra of In-doped TmFeO 3. • Orthoferrites are very attractive option to fulfill the demand of miniaturization data storage and spintronics devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 789
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 136177489
- Full Text :
- https://doi.org/10.1016/j.jallcom.2019.03.042