Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME).

MLA

Xing, Zhiwei, et al. “Growth and Characterization of High In-Content InGaN Grown by MBE Using Metal Modulated Epitaxy Technique (MME).” Journal of Crystal Growth, vol. 516, June 2019, pp. 57–62. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2019.03.021.

APA

Xing, Z., Yang, W., Yuan, Z., Li, X., Wu, Y., Long, J., Jin, S., Zhao, Y., Liu, T., Bian, L., Lu, S., & Luo, M. (2019). Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME). Journal of Crystal Growth, 516, 57–62. https://doi.org/10.1016/j.jcrysgro.2019.03.021

Chicago

Xing, Zhiwei, Wenxian Yang, Zhengbing Yuan, Xuefei Li, Yuanyuan Wu, Junhua Long, Shan Jin, et al. 2019. “Growth and Characterization of High In-Content InGaN Grown by MBE Using Metal Modulated Epitaxy Technique (MME).” Journal of Crystal Growth 516 (June): 57–62. doi:10.1016/j.jcrysgro.2019.03.021.