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Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model.
- Source :
-
Solid-State Electronics . Apr2019, Vol. 154, p24-30. 7p. - Publication Year :
- 2019
-
Abstract
- Highlights • Measurements of parasitic capacitance for several front and back biases is possible. • New model of the inversion charge density for several back bias is validated. • Mobility of UTBB‐FDSOI device with short length is assessed for several back biases. • Short FDSOI device mobility depends on the channel edges scattering mechanism. • Mobility reduction suggests edge‐defects from top to bottom of the Si‐Substrate. Abstract In this work we measure the inversion charge density for short UTBB-FDSOI MOSFETs (down to 45 nm) using an accurate method for the extraction of the parasitic components which take into account the effect of the back bias. Based on these results, we propose a modification of the inversion charge density model that uses the simplified Lambert function in order to include the back bias effect. This model is then validated with the experimental data for different gate lengths (from 185 nm to 45 nm). It is shown that this inversion charge model is valid for the mobility extraction and gives very good assessment of the mobility if we know only the IV-characteristic, the threshold voltage (under back bias effect) and the inversion charge capacitance. Finally, this method is used to extract the mobility for short channel devices (down to 40 nm) and it is found that the short channel mobility suffers from degradation even for large back biases. For the shortest device, it is demonstrated that the main source of mobility degradation is caused by oxide charges and interface states located near the S/D extensions and then it is deduced that the mobility reduction for large back biases is related to neutral defects from Si-crystal close to the channel edge. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 154
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 135576425
- Full Text :
- https://doi.org/10.1016/j.sse.2019.02.003