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Effect of annealing on structure and properties of Ta–O–N films prepared by high power impulse magnetron sputtering.
- Source :
-
Ceramics International . May2019:Part B, Vol. 45 Issue 7, p9454-9461. 8p. - Publication Year :
- 2019
-
Abstract
- Abstract High power impulse magnetron sputtering of a Ta target in various Ar + O 2 + N 2 gas mixtures was utilized to prepare amorphous tantalum oxynitride (Ta–O–N) films with a finely controlled elemental composition in a wide range. We investigate the effect of film annealing at 900 ° C in vacuum on structure and properties of the films. We show that the finely tuned elemental composition in combination with the annealing enables the preparation of crystalline Ta–O–N films exhibiting a single TaON phase with a monoclinic lattice structure, refractive index of 2.65 and extinction coefficient of 2.0 × 10 2 (both at the wavelength of 550 nm), optical band gap width of 2.45 eV (suitable for visible light absorption up to 505 nm), low electrical resistivity of 0.4 Ω cm (indicating enhanced charge transport in the material as compared to the as-deposited counterpart), and appropriate alignment of the band gap with respect to the redox potentials for water splitting. These films are therefore promising candidates for application as visible-light-driven photocatalysts for water splitting. [ABSTRACT FROM AUTHOR]
- Subjects :
- *MAGNETRON sputtering
*ANNEALING of metals
*TANTALUM oxide films
Subjects
Details
- Language :
- English
- ISSN :
- 02728842
- Volume :
- 45
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Ceramics International
- Publication Type :
- Academic Journal
- Accession number :
- 135400285
- Full Text :
- https://doi.org/10.1016/j.ceramint.2018.09.019