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Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques.
- Source :
-
Journal of Applied Physics . 2019, Vol. 125 Issue 10, pN.PAG-N.PAG. 8p. 1 Chart, 5 Graphs. - Publication Year :
- 2019
-
Abstract
- Thermally stimulated techniques—thermally stimulated current (TSC) spectroscopy and thermally stimulated depolarization current (TSDC) spectroscopy—were used to comparatively study the electrical properties and deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk crystals. It was found that the samples are highly resistive and each sample may have different dark current activation energy. Deep level defects revealed by the thermally stimulated techniques vary from sample to sample. In addition to the common traps E1 (∼0.56 eV), E2 (∼0.84 eV), and E3 (∼0.99 eV), reported in the literature and revealed by DLTS studies of Ga2O3 bulk crystals, that were also found in our samples by the thermally stimulated techniques, a trap at ∼110 meV and several other traps are revealed specifically by TSDC between 105 and 225 K. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 125
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 135358175
- Full Text :
- https://doi.org/10.1063/1.5049820