The dielectric properties of alternately doped Ba1-xSrxTiO3 films with different Ba/Sr ratios.

Abstract In this report, we systematically studied the dielectric properties of alternately doped Ba 1-x Sr x TiO 3 films with different Ba/Sr ratios. All species are polycrystalline with an ABO 3 -type structure, which exhibits growth mainly along the (110) crystal face, showing intense crystallization. Regardless of the phase of the films, either ferroelectric or paraelectric, the variation in dielectric loss is insignificant, which can be attributed to the weakening of the domain wall motion. The contribution of domain wall motion to the total losses is only approximately 6.4%, as determined by hyperbolic law calculations. In addition, a model was proposed that can well explain the pinning effect of space charge on the domain wall motion. Furthermore, the FOM value and J-V characteristics indicate that the alternately doped film still possesses good dielectric performance, even in the ferroelectric phase. [ABSTRACT FROM AUTHOR]