Silicon priming benefits germination, ion balance, and root structure in salt-stressed durum wheat (Triticum durum desf.).

Effects of silicon (Si) priming at 0, 0.5, 1.0, and 1.5mM on germination, ion balance, and root structure of two durum wheat cultivars at 0, 100, and 200mM sodium chloride (NaCl) was conducted in a laboratory. An aliquot of 200mM NaCl with 1.5mM Si improved Behrang cultivar germination from 54 to 88%, but in Yavaros only from 49 to 85%. In Behrang, the control root length at 200mM NaCl increased from 5.07 to 7.11mm when treated with 1.5mM Si, but Yavaros only increased from 3.18 to 4.09mm. Behrang accumulated less sodium (Naþ) and more potassium (Kþ). For mean diameter of central and peripheral metaxylem cells, Behrang benefitted more from Si amelioration than Yavaros. Salinity affected the diameter of central and peripheral metaxylem cells to a greater degree compared to vessel number. Si soil application (1.0 and 1.5mM Si) may help to establish durum wheat seeds grown under saline conditions. [ABSTRACT FROM AUTHOR]