In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy.

Graphical abstract Highlights • A successful growth method to epitaxy InAsBi layer on (0 0 1) GaAs substrate is proposed. • Significantly reflectivity signal change during both InAsBi and InAs growth stages. • A wide peak of HRXRD that can be attributed to InAsBi inhomogeneous layer. • Our growth method provides inhomogeneous InAsBi layer with different Bi regions. Abstract We suggest a successful growth method for InAsBi layer epitaxy on (0 0 1) GaAs substrate. An alternated trimethylbismuth flows was used during growth. For real time monitoring of the metalorganic vapor-phase epitaxy of InAsBi layer, we use spectral reflectance. Reflectivity signal is found to change significantly during both InAsBi and InAs growth stages. High-resolution X-ray diffraction (HRXRD) curve shows a wide peak that can be attributed to InAsBi inhomogeneous layer. Based on the signals of several wavelengths in situ monitoring system, the related information of growth rate, refractive index n and the extinction coefficient k of InAs and InAsBi sequences were determined. Simulation results indicate different Bi regions. Theoretical simulation of reflectivity signals was carried out by recurrence method using a multilayer model. Results were ex-situ correlated with atomic force microscopy measurements. [ABSTRACT FROM AUTHOR]