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Multiple Upsets Induced by Protons in 90-nm SRAMs.
- Source :
-
Technical Physics Letters . Dec2018, Vol. 44 Issue 12, p1205-1207. 3p. - Publication Year :
- 2018
-
Abstract
- The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 44
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 135067885
- Full Text :
- https://doi.org/10.1134/S1063785019010097