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Peculiarities of the Condensation of Silicon on the Surface of a Tungsten Single Crystal.
- Source :
-
Technical Physics Letters . Dec2018, Vol. 44 Issue 12, p1052-1054. 3p. - Publication Year :
- 2018
-
Abstract
- Using the methods of the field emission microscopy, the condensation of Si on the W surface at various temperatures T of the substrate and numbers n of monatomic layers of the deposited condensate is studied. At low temperatures of T ~ 600 K, a low-temperature Si monolayer with the structure of pure W is formed on the surface, whereas another structure of a high-temperature monolayer, namely, surface silicide, is formed at T ≥ 1000 K. The low-temperature monolayer and surface silicide also differ in their orienting effect when constructing the Si layers. In the case of condensation on a low-temperature monolayer, crystallites of Si are formed starting already from the third monolayer at n ≥ 3, whereas the Si crystallites grow during the condensation on surface silicide starting from n ≥ 300 monolayers. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 44
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 135067840
- Full Text :
- https://doi.org/10.1134/S1063785018120258