Synthesis of Hydrogenated Silicon Oxycarbonitride from a Gas Mixture of Methyltris(Diethylamino)Silane, Nitrogen, and Oxygen.

Abstract: A synthesis of thin films consisting of hydrogenated silicon oxycarbonitride using high-frequency discharge plasma from a novel organosilicon compound methyltris(diethylamino)silane (MTDEAS) mixed with oxygen and nitrogen are studied. CVD diagrams are obtained as a result of the thermodynamic modeling of the Si-C-N-H-O system in the temperature range from 300 to 1300 K, which makes it possible to optimize the synthesis of film materials such as SiCxNyOz:H. The silicon oxycarbonitride films of various compositions are experimentally obtained in the range of deposition temperatures from 373 to 973 K for different compositions of the initial MTDEAS + O2+ xN2 gas mixture. A change in the chemical composition of the gas mixtures leads to obtaining SiCxNyOz:H films having a large range of functional properties; the refractive index varies from 1.5 to 2.21; the adjustable transparency varies from 92-99.7% in the UV visible and IR spectral regions; and the tunable band gap characteristics vary in the range from 2.5 to 4.5 eV and from 2.9 to 0.7 eV for films grown from MTDEAS + O2+ N2 and MTDEAS + O2+ 2N2 mixtures, respectively. It is shown that the films contain nanocrystals of phases belonging to structures such as Si3 - xCxN4 embedded in the amorphous matrix of hydrogenated silicon oxycarbonitride layers. [ABSTRACT FROM AUTHOR]