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Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique
- Source :
-
Solid-State Electronics . Sep2004, Vol. 48 Issue 9, p1525-1530. 6p. - Publication Year :
- 2004
-
Abstract
- The charge-pumping technique is used for the characterization of the lateral charge distribution in non-volatile memory devices that are based on localized trapping of charge. The lateral charge distribution is calculated directly from charge-pumping measurements using a deconvolution-based procedure. Memory cells employing either a silicon-rich-oxide or Si3N4 trapping medium have been analyzed. Electrons are injected into the trapping medium using channel-hot-electron-injection. The influence of programming pulse width, retention time and device channel length on the lateral charge distribution has been investigated. [Copyright &y& Elsevier]
- Subjects :
- *FERROELECTRIC RAM
*ON-chip charge pumps
*ELECTRONS
*NANOCRYSTALS
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 48
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 13477664
- Full Text :
- https://doi.org/10.1016/j.sse.2004.03.017