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Effects of FeCl3 doping on polymer-based thin film transistors.
- Source :
-
Journal of Applied Physics . 7/1/2004, Vol. 96 Issue 1, p454-458. 5p. 2 Diagrams, 1 Chart, 5 Graphs. - Publication Year :
- 2004
-
Abstract
- Polymer-based thin film transistors (PTFTs) were fabricated on glass substrates with anodized Al2O3 as gate insulators. RR-P3HT (regioregular poly–3-hexylthiophene) and MEH-PPV [poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)] were respectively used as semiconducting active layers for the transistors. A two orders of magnitude increase in field effect mobility (from 7.2×10-4 cm2/V s to 7.4×10-2 cm2/V s) deduced from electrical data of transistors fabricated using FeCl3 doped RR-P3HT was observed. This increase is believed to be mainly due to a large reduction in contact resistance (from 108 Ω to 103 Ω) to the source and drain Au contacts. The conductivity of RR-P3HT was found to increase only slightly with the doping. For MEH-PPV, doping with FeCl3 also decreased its contact resistance. However, it (4 GΩ) was still much larger than the channel (polymer) resistance (1 MΩ), leading to a slight improvement in its field effect mobility. Theoretically, contacts between Au and P3HT should have very small energy barrier heights (<0.2 eV) for hole injection. We believe that a negative vacuum level shift introduced by metal to organic interfacial dipoles might be the origin of this large energy barrier, as well as to large contact resistance. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 96
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 13472324
- Full Text :
- https://doi.org/10.1063/1.1760838