Low‐phase noise 8.22 GHz GaN HEMT oscillator using a feedback multi‐path transformer.

This article designs a low‐phase noise 8.22 GHz GaN high electron‐mobility transistor (HEMT) oscillator in the WIN 0.25 μm GaN HEMT process. The oscillator uses a HEMT amplifier with a transformer as the feedback network. The transformer uses a 3‐path secondary inductor and a single‐path primary inductor. The GaN oscillator consumes the power 4.328 mW and generates a signal at 8.22 GHz with an output power −11.35 dBm. At 1 MHz frequency offset from the carrier at 8.22 GHz the phase noise is −120.82 dBc/Hz, the figure of merit of the proposed oscillator is −192.76 dBc/Hz. The oscillator chip occupies an area of 2 × 1 mm2. [ABSTRACT FROM AUTHOR]