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Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers.
- Source :
-
Materials Science in Semiconductor Processing . Apr2019, Vol. 93, p274-279. 6p. - Publication Year :
- 2019
-
Abstract
- Abstract This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30–200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 1020 at/cm3. The implanted samples were annealed at high temperatures (1675–1825 °C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775 °C, while this increase becomes more significant at 1825 °C (RMS = 1.2 nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65–1.34 × 1018/cm3 and mobility values in the order of 21–27 cm2 V−1 s−1. The temperature dependent electrical measurements allowed to estimate an activation energy of the Al-implanted specie of about 110 meV (for the post-implantation annealing at 1675 °C) and a fraction of active p-type Al-dopant ranging between 39% and 56%. The results give useful indications for the fabrication of 4H-SiC JBS and MOSFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13698001
- Volume :
- 93
- Database :
- Academic Search Index
- Journal :
- Materials Science in Semiconductor Processing
- Publication Type :
- Academic Journal
- Accession number :
- 134465454
- Full Text :
- https://doi.org/10.1016/j.mssp.2019.01.019