Preferential nucleation of silicon nano-crystals on electron beam exposed SiO2 surfaces

We propose a new method, based on a direct electron beam exposure of the SiO2 substrate surface, to create nucleation sites for silicon nano-crystals (Si-Ncs) grown via SiH4 chemical vapor deposition. Thus, control of the Si-Ncs in the growth plane can be obtained. Electron beam exposure has been used to induce local modifications of the chemical properties of the SiO2 layer, due to oxygen desorption. After this writing step, 5 nm diameter Si-Ncs have been deposited. Si-Ncs nucleate preferentially on the exposed area. Starting from experimental results and theoretical simulations, we demonstrate the possibility of achieving Si-Ncs spatial location in this way; these results are promising and open new paths for the realisation of single-electron components. [Copyright &y& Elsevier]