Temperature dependence of magnetic properties on switching energy in magnetic tunnel junction devices with tilted magnetization.

Highlights • This study focuses on the magnetic properties of MTJ based STT-MRAM. • Initial temperature increment in the device influences to the magnetic properties. • Switching energy can be reduced by increase of both initial temperature and angle in free layer. • This study benefits to the technology development of magnetic memory devices in near future. Abstract Spin transfer torque random access memory (STT-RAM) based on magnetic tunnel junction (MTJ) is a popular type of memory because of its non-volatility, small size, and nanosecond access time. The temperature effect on the magnetic properties and the initial angle between the free and pinned layer magnetizations in the MTJ cell are significant for the fast switching process in STT-RAM. In this study, the switching energy was investigated with the temperature effect on the magnetic properties at various initial angles. The results show that the saturation magnetization was decreased by increments of the initial temperature, which also resulted in the reduction of the intrinsic critical current density. Consequently, switching energy can be reduced by the increase of both the initial temperature and the initial angle. Although the initial temperature increment in the MTJ cell is interesting for the fast switching process in STT-RAM, the thermal stability factor greater than 40 and the Curie temperature were both considered for the analysis of the switching energy with magnetic properties, for stabilizing the operation of STT-RAM. [ABSTRACT FROM AUTHOR]