Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique.

Highlights • CdMnTe growth by vertical Bridgman method. • Free from Te-inclusions >1 µm. • X-ray topography. Abstract We grew Cd 1-x Mn x Te crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge. The Te precipitations (size < 1-µm diameter) were found to segregate towards the last-to-freeze section of the ingot. Te inclusions with a size 5–7 µm were observed at the grain boundary located near the last-to-freeze section, while the bottom and middle parts of the ingot showed no Te inclusions, even at the grain boundaries. X-ray topographic analysis was used to characterize the distribution of thermal stress in the ingot. [ABSTRACT FROM AUTHOR]