Cite
Schottky barrier height modulation of metal–interlayer–semiconductor structure depending on contact surface orientation for multi-gate transistors.
MLA
Kim, Gwang-Sik, et al. “Schottky Barrier Height Modulation of Metal–interlayer–semiconductor Structure Depending on Contact Surface Orientation for Multi-Gate Transistors.” Applied Physics Letters, vol. 114, no. 1, Jan. 2019, p. N.PAG. EBSCOhost, https://doi.org/10.1063/1.5065537.
APA
Kim, G.-S., Lee, T. I., Cho, B. J., & Yu, H.-Y. (2019). Schottky barrier height modulation of metal–interlayer–semiconductor structure depending on contact surface orientation for multi-gate transistors. Applied Physics Letters, 114(1), N.PAG. https://doi.org/10.1063/1.5065537
Chicago
Kim, Gwang-Sik, Tae In Lee, Byung Jin Cho, and Hyun-Yong Yu. 2019. “Schottky Barrier Height Modulation of Metal–interlayer–semiconductor Structure Depending on Contact Surface Orientation for Multi-Gate Transistors.” Applied Physics Letters 114 (1): N.PAG. doi:10.1063/1.5065537.