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A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0 0 0 1)
- Source :
-
Journal of Crystal Growth . Jun2004, Vol. 267 Issue 1/2, p140-144. 5p. - Publication Year :
- 2004
-
Abstract
- High-quality [0 0 0 1]-oriented ZnO films were grown in a single growth experiment on GaN/Al2O3 applying a two-step metal organic vapor phase epitaxy growth technique. The essence of this method is the heteroepitaxy of a low-temperature ZnO buffer layer using dimethyl-zinc and tertiary-butanol precursors on GaN/Al2O3 and the subsequent homoepitaxial growth of a high-temperature layer using N2O as O-precursor. The layers show smooth surface morphology and high crystalline quality as demonstrated by X-ray diffraction (FWHM of (0 0 0 2) ω-scans for a 2.28 μm thick layer is 160″). The bright luminescence is dominated by narrow excitonic emission lines (e.g., FWHM <1.3 meV for bound exciton I8). Our method opens broad prospect for the growth of ZnO-based device structures. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 267
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 13388634
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2004.03.028