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Effect of the AlN interlayer on electroluminescent performance of n-SnO2/p-GaN heterojunction light-emitting diodes.
- Source :
-
Materials Science in Semiconductor Processing . Mar2019, Vol. 91, p409-413. 5p. - Publication Year :
- 2019
-
Abstract
- Abstract Light emitting diodes (LEDs) based on n-SnO 2 /p-GaN heterojunction were fabricated by pulsed laser deposition (PLD). The effects of post-annealing treatment and interfacial layers on electroluminescence (EL) of n-SnO 2 /p-GaN were investigated. After annealing in vacuum, all the LED devices with different interfacial layers exhibit a nonlinear current-voltage behavior. The SnO 2 /p-GaN light emitting diodes exhibit two emission peaks, a violet peak (410 nm) and the broad yellow-orange emission band (600–700 nm), whereas only the yellow-orange EL spectra could be found in the SnO 2 /AlN/p-GaN. Using the band diagram, the carrier blocking process by different interfacial layer and the electroluminescence mechanisms of heterojunction LEDs were discussed in detail. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13698001
- Volume :
- 91
- Database :
- Academic Search Index
- Journal :
- Materials Science in Semiconductor Processing
- Publication Type :
- Academic Journal
- Accession number :
- 133781451
- Full Text :
- https://doi.org/10.1016/j.mssp.2018.12.015