Two-step degradation of a-InGaZnO thin film transistors under DC bias stress.

MLA

Hu, Chun-Feng, et al. “Two-Step Degradation of a-InGaZnO Thin Film Transistors under DC Bias Stress.” Solid-State Electronics, vol. 152, Feb. 2019, pp. 4–10. EBSCOhost, https://doi.org/10.1016/j.sse.2018.11.005.

APA

Hu, C.-F., Teng, T., & Qu, X.-P. (2019). Two-step degradation of a-InGaZnO thin film transistors under DC bias stress. Solid-State Electronics, 152, 4–10. https://doi.org/10.1016/j.sse.2018.11.005

Chicago

Hu, Chun-Feng, Tong Teng, and Xin-Ping Qu. 2019. “Two-Step Degradation of a-InGaZnO Thin Film Transistors under DC Bias Stress.” Solid-State Electronics 152 (February): 4–10. doi:10.1016/j.sse.2018.11.005.