Influence of primary annealing on Goss development in grain oriented silicon steels.

Two different primary annealing conditions (continuous heating and discontinuous heating) on conventional oriented silicon steel were employed, and the evolution of microstructure and Goss frequency, as well as orientations of Goss neighbourhood from recovery to secondary recrystallisation, was investigated by means of optical microscopy and advanced electron backscatter diffraction (EBSD) technique. It could be concluded that high Goss frequency before secondary recrystallisation possibly did not contribute to sharp Goss orientation, even excellent magnetic property and that no grains with less deviation from ideal Goss first began to grow. As for coincidence site lattice (CSL) grain boundary and high energy grain boundary theories, the latter can explain the development of Goss due to its high frequency compared with CSL boundary of low frequency. [ABSTRACT FROM AUTHOR]