Pressure induced semiconductor-metal transition in polycrystalline β-Ag0.33V2O5.

Highlights • Pressure-dependent electronic properties of polycrystalline β -Ag 0.33 V 2 O 5 is investigated for the first time. • An semiconductor-metallic state transition occurs at 4.5 GPa and room temperature. • High temperature/pressure treatment can markedly reduce S-M transition pressure to 1.5 GPa. Abstract The pressure-dependent electronic properties of polycrystalline β -Ag 0.33 V 2 O 5 were investigated and a discontinuous change of electrical resistance is found at around 4.5 GPa, where semiconductive-like decreasing trend before 4.5 GPa and a metallic-like increasing trend after 4.5 GPa with increasing temperature was observed. Furthermore, high temperature/pressure treatment can markedly reduce the semiconductor-metal (S-M) transition pressure to around 1.5 GPa. The results indicate a promising way for engineering the electronic properties of polycrystalline Ag 0.33 V 2 O 5 , and this pressure/temperature induced semiconductor-metal switch may have potential applications in electronics field. [ABSTRACT FROM AUTHOR]