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Strongly nonlinear electronic transport in Cr-Si composite films.

Authors :
Burkov, A. T.
Vinzelberg, H.
Schumann, J.
Nakama, T.
Yagasaki, K.
Source :
Journal of Applied Physics. 6/15/2004, Vol. 95 Issue 12, p7903-7907. 5p. 1 Black and White Photograph, 1 Diagram, 6 Graphs.
Publication Year :
2004

Abstract

The phase formation, the resistivity and the thermopower of amorphous Cr0.15Si0.85, and nanocrystalline CrSi2-Si thin film composites have been studied. The films were produced by a magnetron sputtering of a composite target onto unheated substrates with subsequent crystallization of the film at high temperatures. As the film composite develops under the heat treatment from the initial amorphous state into the final polycrystalline material, two percolation thresholds were found. At first, the percolating cluster of nanocrystalline CrSi2 is formed. However, this cluster is destroyed with further annealing due to crystallization and redistribution of Si. The composite films which are close to this insulating threshold reveal a strongly nonlinear conductivity. The conductivity increases with the current by two orders of magnitude. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
95
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
13307802
Full Text :
https://doi.org/10.1063/1.1719266