Growth and thermal properties of various In2Se3 nanostructures prepared by single step PVD technique.

Abstract In 2 Se 3 nanostructures have attracted much attention due to their potential applications in diverse areas, such as solar energy conversion, thermoelectric power generation, phase change random access memories, photodetectors, and optoelectronics in the visible region. In the present work, we have fabricated various In 2 Se 3 nanostructures on SiO 2 /Si substrate using a simple and single-step physical vapor deposition (PVD) method, without using metal seed layer on the substrates. Morphology, structure and phase of the as-grown In 2 Se 3 nanostructures have been carried out using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, respectively. In addition, we have also explored thermal properties of In 2 Se 3 nanostructures on SiO 2 /Si substrate using temperature and power dependent Raman spectroscopy. Further, the thermal conductivity of nanoparticles, nanospheres, and rod like flowers at room temperature were found to be ∼37.6, ∼39.5, and ∼15.6 W/m-K, respectively. This work suggests an effective way to form various novel nanostructures, opening up a new scenario to understand the vibrational properties and electron-phonon interactions of In 2 Se 3 nanostructures. Graphical abstract Image 1 Highlights • A simple and single step PVD method was used to grow various In 2 Se 3 nanostructures. • Temperature and power-dependent Raman study was done on various In 2 Se 3 nanostructures. • Thermal conductivity of various In 2 Se 3 nanostructures was evaluated. • p-p and e-p interactions have been analyzed with Raman measurements. [ABSTRACT FROM AUTHOR]